SIS990DN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIS990DN-T1-GE3 Vishay Siliconix
SIS990DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 12.1A 1212-8

SIS990DN-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 100V 12.1A 1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8 Dual, power - max 25W.

In Stock: 7,251

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12.1A
Rds On (Max) @ Id, Vgs85mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 50V
Power - Max25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

Need a Quote for SIS990DN-T1-GE3?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →