Name: SIS932EDN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS932EDN-T1-GE3
Price: 0.68 USD
Availability: InStock

REF: SIS932EDN-T1-GE3 Vishay Siliconix

SIS932EDN-T1-GE3

Vishay Siliconix

MOSFET N-CH DL 30V PWRPAK 1212-8

SIS932EDN-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N-CH DL 30V PWRPAK 1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8 Dual, power - max 2.6W (Ta), 23W (Tc).

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In Stock: 5,625

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Rds On (Max) @ Id, Vgs	22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
Power - Max	2.6W (Ta), 23W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual