Name: SIS902DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS902DN-T1-GE3
Availability: InStock

REF: SIS902DN-T1-GE3 Vishay Siliconix

SIS902DN-T1-GE3

MOSFET 2N-CH 75V 4A PPAK 1212-8

SIS902DN-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 75V 4A PPAK 1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8 Dual, power - max 15.4W.

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In Stock: 2,822

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	4A
Rds On (Max) @ Id, Vgs	186mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	175pF @ 38V
Power - Max	15.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual