Name: SIS888DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS888DN-T1-GE3
Price: 1.72 USD
Availability: InStock

REF: SIS888DN-T1-GE3 Vishay Siliconix

SIS888DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 150V 20.2A PPAK

SIS888DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 150V 20.2A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TA), package / case PowerPAK® 1212-8S.

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In Stock: 1,938

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	58mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	420 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	52W (Tc)
Operating Temperature	-55°C ~ 150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S