Name: SIS590DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS590DN-T1-GE3
Availability: InStock

REF: SIS590DN-T1-GE3 Vishay Siliconix

SIS590DN-T1-GE3

COMBO N- & P-CHANNEL 100 V (D-S)

SIS590DN-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. COMBO N- & P-CHANNEL 100 V (D-S). Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8 Dual, power - max 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc).

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In Stock: 8,004

Specifications

14 parameters

Product Status	Active
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs	167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual