SIS178LDN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIS178LDN-T1-GE3 Vishay Siliconix
SIS178LDN-T1-GE3

Vishay Siliconix

N-CHANNEL 70 V (D-S) MOSFET POWE

SIS178LDN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 70 V (D-S) MOSFET POWE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

In Stock: 6,914

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)70 V
Current - Continuous Drain (Id) @ 25°C13.9A (Ta), 45.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1135 pF @ 35 V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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