SIRB40DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIRB40DP-T1-GE3 Vishay Siliconix
SIRB40DP-T1-GE3

Vishay Siliconix

MOSFET 2 N-CH 40V POWERPAK SO8

SIRB40DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2 N-CH 40V POWERPAK SO8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 46.2W.

In Stock: 6,655

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds4290pF @ 20V
Power - Max46.2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Need a Quote for SIRB40DP-T1-GE3?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →