SIRA62DP-T1-RE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIRA62DP-T1-RE3 Vishay Siliconix
SIRA62DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 30V 51.4A/80A PPAK

SIRA62DP-T1-RE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 51.4A/80A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

In Stock: 5,822

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C51.4A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds4460 pF @ 15 V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 65.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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