Name: SIR882BDP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR882BDP-T1-RE3
Price: 1.68 USD
Availability: InStock

REF: SIR882BDP-T1-RE3 Vishay Siliconix

SIR882BDP-T1-RE3

Vishay Siliconix

MOSFET N-CH 100V 16.5/67.5A PPAK

SIR882BDP-T1-RE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 100V 16.5/67.5A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

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In Stock: 3,538

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	16.5A (Ta), 67.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3762 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 83.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8