Name: SIR840DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR840DP-T1-GE3
Availability: InStock

REF: SIR840DP-T1-GE3 Vishay Siliconix

SIR840DP-T1-GE3

MOSFET N-CH 30V PPAK SO-8

SIR840DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

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In Stock: 3,863

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8