Name: SIR770DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR770DP-T1-GE3
Price: 1.23 USD
Availability: InStock

REF: SIR770DP-T1-GE3 Vishay Siliconix

SIR770DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A PPAK SO-8

SIR770DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V 8A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 17.8W.

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In Stock: 1,357

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A
Rds On (Max) @ Id, Vgs	21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 15V
Power - Max	17.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual