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SIR664DP-T1-GE3

In Stock: 9,926
SIR664DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIR664DP-T1-GE3 Vishay Siliconix
SIR664DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 60A PPAK SO-8

SIR664DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 60A PPAK SO-8. Key specifications: mounting type Surface Mount, package / case PowerPAK® SO-8.

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In Stock: 9,926

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 30 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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