SIR572DP-T1-RE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIR572DP-T1-RE3 Vishay Siliconix
SIR572DP-T1-RE3

Vishay Siliconix

N-CHANNEL 150 V (D-S) MOSFET POW

SIR572DP-T1-RE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 150 V (D-S) MOSFET POW. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

In Stock: 8,149

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C14.8A (Ta), 59.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs10.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2733 pF @ 75 V
FET Feature-
Power Dissipation (Max)5.7W (Ta), 92.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

Need a Quote for SIR572DP-T1-RE3?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →