SIR492DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIR492DP-T1-GE3 Vishay Siliconix
SIR492DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 40A PPAK SO-8

SIR492DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 12V 40A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

In Stock: 3,265

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3720 pF @ 6 V
FET Feature-
Power Dissipation (Max)4.2W (Ta), 36W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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