Name: SIR1309DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR1309DP-T1-GE3
Price: 0.99 USD
Availability: InStock

REF: SIR1309DP-T1-GE3 Vishay Siliconix

SIR1309DP-T1-GE3

Vishay Siliconix

P-CHANNEL 30 V (D-S) MOSFET POWE

SIR1309DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. P-CHANNEL 30 V (D-S) MOSFET POWE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

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In Stock: 1,466

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	19.1A (Ta), 65.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V

Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 56.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8