Name: SIR112DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR112DP-T1-RE3
Price: 1.45 USD
Availability: InStock

REF: SIR112DP-T1-RE3 Vishay Siliconix

SIR112DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 40V 37.6A/133A PPAK

SIR112DP-T1-RE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 40V 37.6A/133A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

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In Stock: 2,521

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	37.6A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.96mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V

Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	4270 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8