Name: SIJH600E-T1-GE3
Brand: Vishay Siliconix
SKU: SIJH600E-T1-GE3
Price: 6.69 USD
Availability: InStock

REF: SIJH600E-T1-GE3 Vishay Siliconix

SIJH600E-T1-GE3

Vishay Siliconix

N-CHANNEL 60-V (D-S) 175C MOSFET

SIJH600E-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 60-V (D-S) 175C MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® 8 x 8.

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In Stock: 9,426

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	37A (Ta), 373A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	0.92Ohm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	212 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9950 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	PowerPAK® 8 x 8