Name: SIJH112E-T1-GE3
Brand: Vishay Siliconix
SKU: SIJH112E-T1-GE3
Price: 4.82 USD
Availability: InStock

REF: SIJH112E-T1-GE3 Vishay Siliconix

SIJH112E-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 23A/225A PPAK

SIJH112E-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 100V 23A/225A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 5,372

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8050 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN