SIJ450DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIJ450DP-T1-GE3 Vishay Siliconix
SIJ450DP-T1-GE3

Vishay Siliconix

N-CHANNEL 45 V (D-S) MOSFET POWE

SIJ450DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 45 V (D-S) MOSFET POWE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

In Stock: 9,432

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)45 V
Current - Continuous Drain (Id) @ 25°C36A (Ta), 113A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds5920 pF @ 20 V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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