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SIHP22N65E-GE3

In Stock: 9,709
SIHP22N65E-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIHP22N65E-GE3 Vishay Siliconix
SIHP22N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 22A TO220AB

SIHP22N65E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 650V 22A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 9,709

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2415 pF @ 100 V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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