SIHP15N50E-BE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIHP15N50E-BE3 Vishay Siliconix
SIHP15N50E-BE3

Vishay Siliconix

N-CHANNEL 500V

SIHP15N50E-BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 500V. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 8,426

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1162 pF @ 100 V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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