Name: SIHJ7N65E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHJ7N65E-T1-GE3
Price: 2.69 USD
Availability: InStock

REF: SIHJ7N65E-T1-GE3 Vishay Siliconix

SIHJ7N65E-T1-GE3

Vishay Siliconix

MOSFET N-CH 650V 7.9A PPAK SO-8

SIHJ7N65E-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 650V 7.9A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

Datasheet Request a Quote

In Stock: 3,037

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	598mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8