SIHH080N60E-T1-GE3

In Stock: 1,349
SIHH080N60E-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIHH080N60E-T1-GE3 Vishay Siliconix
SIHH080N60E-T1-GE3

Vishay Siliconix

E SERIES POWER MOSFET POWERPAK 8

SIHH080N60E-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. E SERIES POWER MOSFET POWERPAK 8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 1,349

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 17A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2557 pF @ 100 V
FET Feature-
Power Dissipation (Max)184W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

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