SIHG080N60E-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIHG080N60E-GE3 Vishay Siliconix
SIHG080N60E-GE3

Vishay Siliconix

E SERIES POWER MOSFET TO-247AC,

SIHG080N60E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. E SERIES POWER MOSFET TO-247AC,. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 2,238

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 17A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2557 pF @ 100 V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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