Name: SIHB22N60S-E3
Brand: Vishay Siliconix
SKU: SIHB22N60S-E3
Availability: InStock

REF: SIHB22N60S-E3 Vishay Siliconix

SIHB22N60S-E3

MOSFET N-CH 600V 22A TO263

SIHB22N60S-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 600V 22A TO263. Key specifications: mounting type Surface Mount, package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 7,435

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2810 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB