Name: SIE860DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE860DF-T1-GE3
Availability: InStock

REF: SIE860DF-T1-GE3 Vishay Siliconix

SIE860DF-T1-GE3

MOSFET N-CH 30V 60A 10POLARPAK

SIE860DF-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 60A 10POLARPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 10-PolarPAK® (M).

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In Stock: 5,314

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.1mOhm @ 21.7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (M)
Package / Case	10-PolarPAK® (M)