Name: SIE810DF-T1-GE3
Brand: Vishay Siliconix
SKU: SIE810DF-T1-GE3
Price: 3.61 USD
Availability: InStock

REF: SIE810DF-T1-GE3 Vishay Siliconix

SIE810DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 60A 10POLARPAK

SIE810DF-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 60A 10POLARPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 10-PolarPAK® (L).

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In Stock: 7,826

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)