Name: SIDR610DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIDR610DP-T1-GE3
Price: 3.58 USD
Availability: InStock

REF: SIDR610DP-T1-GE3 Vishay Siliconix

SIDR610DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 200V 8.9A/39.6A PPAK

SIDR610DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 8.9A/39.6A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

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In Stock: 1,944

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1380 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8