Name: SIDR5102EP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR5102EP-T1-RE3
Price: 3.11 USD
Availability: InStock

REF: SIDR5102EP-T1-RE3 Vishay Siliconix

SIDR5102EP-T1-RE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) 175C MOSFE

SIDR5102EP-T1-RE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 100 V (D-S) 175C MOSFE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8.

Datasheet Request a Quote

In Stock: 7,516

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	28.2A (Ta), 126A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2850 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	7.5W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8