Name: SIDR392DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIDR392DP-T1-GE3
Price: 2.85 USD
Availability: InStock

REF: SIDR392DP-T1-GE3 Vishay Siliconix

SIDR392DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 82A/100A PPAK

SIDR392DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 82A/100A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

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In Stock: 5,465

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	188 nC @ 10 V

Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	9530 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8