Name: SIB911DK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB911DK-T1-GE3
Availability: InStock

REF: SIB911DK-T1-GE3 Vishay Siliconix

SIB911DK-T1-GE3

MOSFET 2P-CH 20V 2.6A SC75-6

SIB911DK-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 20V 2.6A SC75-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-75-6L Dual, power - max 3.1W.

Datasheet Request a Quote

In Stock: 8,423

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 P-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.6A
Rds On (Max) @ Id, Vgs	295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	115pF @ 10V
Power - Max	3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L Dual
Supplier Device Package	PowerPAK® SC-75-6L Dual