Name: SIB900EDK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB900EDK-T1-GE3
Availability: InStock

REF: SIB900EDK-T1-GE3 Vishay Siliconix

SIB900EDK-T1-GE3

MOSFET 2N-CH 20V 1.5A SC-75-6

SIB900EDK-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 20V 1.5A SC-75-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-75-6L Dual, power - max 3.1W.

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In Stock: 9,021

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.5A
Rds On (Max) @ Id, Vgs	225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L Dual
Supplier Device Package	PowerPAK® SC-75-6L Dual