Name: SIB452DK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB452DK-T1-GE3
Price: 0.82 USD
Availability: InStock

REF: SIB452DK-T1-GE3 Vishay Siliconix

SIB452DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 190V 1.5A PPAK SC75

SIB452DK-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 190V 1.5A PPAK SC75. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-75-6.

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In Stock: 8,691

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	190 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	2.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 10 V

Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	135 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-75-6
Package / Case	PowerPAK® SC-75-6