SIB422EDK-T4-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIB422EDK-T4-GE3 Vishay Siliconix
SIB422EDK-T4-GE3

Vishay Siliconix

MOSFET N-CH 20V 7.1A/9A PPAK

SIB422EDK-T4-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 7.1A/9A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-75-6.

In Stock: 6,335

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C7.1A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.5W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6
Package / CasePowerPAK® SC-75-6

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