Name: SIB419DK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB419DK-T1-GE3
Availability: InStock

REF: SIB419DK-T1-GE3 Vishay Siliconix

SIB419DK-T1-GE3

MOSFET P-CH 12V 9A PPAK SC75-6

SIB419DK-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V 9A PPAK SC75-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-75-6.

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In Stock: 4,932

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	60mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.82 nC @ 5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	562 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	2.45W (Ta), 13.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-75-6
Package / Case	PowerPAK® SC-75-6