Name: SIB412DK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB412DK-T1-GE3
Availability: InStock

REF: SIB412DK-T1-GE3 Vishay Siliconix

SIB412DK-T1-GE3

MOSFET N-CH 20V 9A PPAK SC75-6

SIB412DK-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 9A PPAK SC75-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-75-6.

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In Stock: 6,928

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.16 nC @ 5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	535 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-75-6
Package / Case	PowerPAK® SC-75-6