Name: SIA950DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA950DJ-T1-GE3
Availability: InStock

REF: SIA950DJ-T1-GE3 Vishay Siliconix

SIA950DJ-T1-GE3

MOSFET 2N-CH 190V 0.95A SC-70-6

SIA950DJ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 190V 0.95A SC-70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6 Dual, power - max 7W.

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In Stock: 2,305

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	190V
Current - Continuous Drain (Id) @ 25°C	950mA
Rds On (Max) @ Id, Vgs	3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 100V
Power - Max	7W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual