Name: SIA938DJT-T1-GE3
Brand: Vishay Siliconix
SKU: SIA938DJT-T1-GE3
Price: 0.70 USD
Availability: InStock

REF: SIA938DJT-T1-GE3 Vishay Siliconix

SIA938DJT-T1-GE3

Vishay Siliconix

DUAL N-CHANNEL 20-V (D-S) MOSFET

SIA938DJT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. DUAL N-CHANNEL 20-V (D-S) MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6 Dual, power - max 1.9W (Ta), 7.8W (Tc).

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In Stock: 5,418

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs	21.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
Power - Max	1.9W (Ta), 7.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual