SIA915DJ-T4-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIA915DJ-T4-GE3 Vishay Siliconix
SIA915DJ-T4-GE3

Vishay Siliconix

MOSFET 2P-CH 30V SC70-6

SIA915DJ-T4-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 30V SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6 Dual, power - max 1.9W (Ta), 6.5W (Tc).

In Stock: 9,664

Specifications

14 parameters
Product StatusObsolete
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs87mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds275pF @ 15V
Power - Max1.9W (Ta), 6.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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