Name: SIA912DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA912DJ-T1-GE3
Availability: InStock

REF: SIA912DJ-T1-GE3 Vishay Siliconix

SIA912DJ-T1-GE3

MOSFET 2N-CH 12V 4.5A SC70-6

SIA912DJ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 12V 4.5A SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6 Dual, power - max 6.5W.

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In Stock: 8,851

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.5A
Rds On (Max) @ Id, Vgs	40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 6V
Power - Max	6.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual