Name: SIA907EDJT-T1-GE3
Brand: Vishay Siliconix
SKU: SIA907EDJT-T1-GE3
Price: 0.58 USD
Availability: InStock

REF: SIA907EDJT-T1-GE3 Vishay Siliconix

SIA907EDJT-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC-70-6L

SIA907EDJT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 20V 4.5A SC-70-6L. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6 Dual, power - max 7.8W.

Datasheet Request a Quote

In Stock: 5,939

Specifications

14 parameters

Product Status	Not For New Designs
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Rds On (Max) @ Id, Vgs	57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	7.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual