Name: SIA777EDJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA777EDJ-T1-GE3
Availability: InStock

REF: SIA777EDJ-T1-GE3 Vishay Siliconix

SIA777EDJ-T1-GE3

MOSFET N/P-CH 20V/12V SC70-6L

SIA777EDJ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V/12V SC70-6L. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6 Dual, power - max 5W, 7.8W.

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In Stock: 7,499

Specifications

14 parameters

Product Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V, 12V
Current - Continuous Drain (Id) @ 25°C	1.5A, 4.5A
Rds On (Max) @ Id, Vgs	225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	5W, 7.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual