Name: SIA483ADJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA483ADJ-T1-GE3
Price: 0.15 USD
Availability: InStock

REF: SIA483ADJ-T1-GE3 Vishay Siliconix

SIA483ADJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 10.6A/12A PPAK

SIA483ADJ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 10.6A/12A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6.

Datasheet Request a Quote

In Stock: 3,373

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	10.6A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V

Vgs (Max)	+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.4W (Ta), 17.9W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6
Package / Case	PowerPAK® SC-70-6