SIA462DJ-T4-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIA462DJ-T4-GE3 Vishay Siliconix
SIA462DJ-T4-GE3

Vishay Siliconix

MOSFET N-CH 30V 12A/12A PPAK

SIA462DJ-T4-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 12A/12A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6.

In Stock: 8,332

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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