Name: SIA456DJ-T3-GE3
Brand: Vishay Siliconix
SKU: SIA456DJ-T3-GE3
Price: 0.44 USD
Availability: InStock

REF: SIA456DJ-T3-GE3 Vishay Siliconix

SIA456DJ-T3-GE3

Vishay Siliconix

MOSFET N-CH 200V 1.1A/2.6A PPAK

SIA456DJ-T3-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 1.1A/2.6A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6.

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In Stock: 8,519

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta), 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V

Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6
Package / Case	PowerPAK® SC-70-6