SIA443DJ-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SIA443DJ-T1-E3 Vishay Siliconix
SIA443DJ-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 9A PPAK SC70-6

SIA443DJ-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 9A PPAK SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6.

In Stock: 3,573

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs45mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 10 V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 15W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6
Package / CasePowerPAK® SC-70-6

Need a Quote for SIA443DJ-T1-E3?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →