Name: SIA425EDJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA425EDJ-T1-GE3
Availability: InStock

REF: SIA425EDJ-T1-GE3 Vishay Siliconix

SIA425EDJ-T1-GE3

MOSFET P-CH 20V 4.5A PPAK SC70-6

SIA425EDJ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 4.5A PPAK SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6.

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In Stock: 2,409

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	60mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	2.9W (Ta), 15.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6
Package / Case	PowerPAK® SC-70-6