Name: SI8900EDB-T2-E1
Brand: Vishay Siliconix
SKU: SI8900EDB-T2-E1
Availability: InStock

REF: SI8900EDB-T2-E1 Vishay Siliconix

SI8900EDB-T2-E1

MOSFET 2N-CH 20V 5.4A 10-MFP

SI8900EDB-T2-E1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 20V 5.4A 10-MFP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 10-UFBGA, CSPBGA, power - max 1W.

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In Stock: 2,732

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.4A
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	10-UFBGA, CSPBGA
Supplier Device Package	10-Micro Foot™ CSP (2x5)