SI8823EDB-T2-E1 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI8823EDB-T2-E1 Vishay Siliconix
SI8823EDB-T2-E1

Vishay Siliconix

MOSFET P-CH 20V 2.7A 4MICRO FOOT

SI8823EDB-T2-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 2.7A 4MICRO FOOT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-XFBGA.

In Stock: 2,234

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 10 V
FET Feature-
Power Dissipation (Max)900mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-MICRO FOOT® (0.8x0.8)
Package / Case4-XFBGA

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