Name: SI8819EDB-T2-E1
Brand: Vishay Siliconix
SKU: SI8819EDB-T2-E1
Price: 0.45 USD
Availability: InStock

REF: SI8819EDB-T2-E1 Vishay Siliconix

SI8819EDB-T2-E1

Vishay Siliconix

MOSFET P-CH 12V 2.9A 4MICRO FOOT

SI8819EDB-T2-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V 2.9A 4MICRO FOOT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-XFBGA.

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In Stock: 441

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 3.7V
Rds On (Max) @ Id, Vgs	80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 8 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA